Design and modeling of line-tunneling field-effect transistors using low bandgap semiconductors
The low-bandgap engineering and line-tunneling architecture are the two major techniques to resolve the ON-current issues of tunnel field-effect transistors (TFETs). This paper elucidates the design and modeling of line-tunneling TFETs using low-bandgap materials. Three semiconductors, Ge, InAs, and...
Đã lưu trong:
| Những tác giả chính: | , |
|---|---|
| 格式: | Journal article |
| 语言: | English |
| 出版: |
IEEE Publishing
2024
|
| 主题: | |
| 在线阅读: | https://scholar.dlu.edu.vn/handle/123456789/3291 |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|