On-current limitation of high-k gate insulator MOSFETs
This work explores the limitation of high-k gate insulator on improving the driving currents of MOSFET devices. The use of high-k gate dielectric prevents from the gate tunneling current to have an acceptable equivalent oxide thickness (EOT) in scaled MOSFETs. However, the effectiveness of continued...
में बचाया:
| मुख्य लेखकों: | , , , |
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| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
Elsevier
2024
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| विषय: | |
| ऑनलाइन पहुंच: | https://scholar.dlu.edu.vn/handle/123456789/3296 |
| टैग : |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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