Threshold voltage of Ge channel MOSFETs with high-k gate insulator
As the MOSFET devices scale into nanoscale regime, it is increasingly difficult to enhance the performance of silicon CMOS devices through traditional scaling approaches. Ge channel MOSFETs with high -k gate insulator become one of most attracting candidates for the use in fut...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , |
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| বিন্যাস: | Conference paper |
| ভাষা: | English |
| প্রকাশিত: |
Sweden
2024
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| অনলাইন ব্যবহার করুন: | https://scholar.dlu.edu.vn/handle/123456789/3303 |
| ট্যাগগুলো: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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