Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain
This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....
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2024
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oai:scholar.dlu.edu.vn:123456789-33072024-03-02T10:05:24Z Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain Jui-Kai Hsia Chun-Hsing Shih Ting-Shiuan Kang Nguyễn, Đăng Chiến Nguyen Van Kien SOl MOSFETs Short-channel effect Silicon -on-insulator Shallow source/drain Fringing field This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts. 129-132 2024-03-02T10:05:16Z 2024-03-02T10:05:16Z 2013 Conference paper Bài báo đăng trên KYHT quốc tế (có ISBN) 978-1-4673-4800-3 https://scholar.dlu.edu.vn/handle/123456789/3307 10.1109/ULIS.2013.6523530 en International Conference on Ultimate Integration on Silicon (ULIS) [1] Y. Taur and T. Ning, Fundamental of Modern VLSI Devices. 2nd. New York: Cambridge Univ. Press, 2009. [2] 1. P. Colinge, "Subthreshold slope of thin-film SOl MOSFETs," IEEE Electron Device Lett., vol. EDL-7, no. 4, pp. 244--246, Apr. 1986. [3] B. Agrawal, V. K. De, 1. M. Pimbley, and 1. D. Meindl, "Short Channel Models and Scaling Limits of SO l and Bulk MOSFET's," IEEE Journal of Solid-State Circuits, vol. 29, no. 2, pp. 122-125, Feb. 1994. [4] V. Trivedi and J. Fossum, "Scaling fully depleted SOl CMOS," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2095-2103, Oct. 2003. [5] Wei-Yuan Lu and Yuan Taur, "On the Scaling Limit of Ultrathin SOl MOSFETs," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1137-1141, May 2006. [6] S. Burignat, M.K.M. Arshad, .I.-P. Raskin,Y. Kilchytska, D. Flandre, O. Faynot, P. Scheiblin, F. Andrieu, "Drain/Substrate coupling impact on DIBL of Ultra Thin Body and BOX SOl MOSFETswith undoped channel," in the European Solid-State Device Research Conference (ESSDERC), 2009, pp. 141-144. [7] Shunpei Abe, Yoshiyasu Miyazawa, Yoshikata Nakajima, Tatsuro Hanajiri, TofU Toyabe, and Takuo Sugano, "Suppression of DIBL in deca-nano SOl MOSFETs by controlling permittivity and thickness of BOX layers," in lOth International Conference on Ultimate Integration of Silicon, 2009. pp. 329-332. [8] C. Sampedro, F. Gamiz, L. Donetti, and A. Godoy, "Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization," Solid-State Electron., vol. 70, pp. 101-105, Apr. 2012. [9] Synopsys MEDICI User's Manual, Synopsys Inc., Mountain View, CA, 2010. IEEE Publishing USA |
| institution |
Thư viện Trường Đại học Đà Lạt |
| collection |
Thư viện số |
| language |
English |
| topic |
SOl MOSFETs Short-channel effect Silicon -on-insulator Shallow source/drain Fringing field |
| spellingShingle |
SOl MOSFETs Short-channel effect Silicon -on-insulator Shallow source/drain Fringing field Jui-Kai Hsia Chun-Hsing Shih Ting-Shiuan Kang Nguyễn, Đăng Chiến Nguyen Van Kien Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| description |
This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts. |
| format |
Conference paper |
| author |
Jui-Kai Hsia Chun-Hsing Shih Ting-Shiuan Kang Nguyễn, Đăng Chiến Nguyen Van Kien |
| author_facet |
Jui-Kai Hsia Chun-Hsing Shih Ting-Shiuan Kang Nguyễn, Đăng Chiến Nguyen Van Kien |
| author_sort |
Jui-Kai Hsia |
| title |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| title_short |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| title_full |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| title_fullStr |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| title_full_unstemmed |
Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain |
| title_sort |
fringing field and short channel effects in thin-body soi mosfets with shallow source/drain |
| publisher |
IEEE Publishing |
| publishDate |
2024 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/3307 |
| _version_ |
1798256985546686464 |