Quantum Confinement Effect in Strained-Si¬1-xGex Double-Gate Tunnel Field-Effect Transistors
The energy bandgap is a key factor to determine the tunneling current in tunnel field-effect transistors (TFETs). This paper numerically investigates the effect of quantum confinement in the double-gate TFETs by evaluating the effective energy-band bandgap of the ultra-thin strained-Si1-xGex body....
שמור ב:
| Những tác giả chính: | , , , |
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| פורמט: | Conference paper |
| שפה: | English |
| יצא לאור: |
IEEE Publishing
2024
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| גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/3308 |
| תגים: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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