Modeling of direct band-to-band tunneling in one-sided pn junctions based on Kane’s model
Recently, the band-to-band tunneling (BTBT) has been employed as a main mechanism to produce the conduction current in tunnel field-effect transistors (TFETs) which are currently considered as a potential candidate for low power integrated circuits because of their achievable sub-60 mV/decade subthr...
שמור ב:
| Những tác giả chính: | , , |
|---|---|
| פורמט: | Conference paper |
| שפה: | English |
| יצא לאור: |
Bach Khoa Publishing House
2024
|
| נושאים: | |
| גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/3314 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|