Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel perf...
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oai:scholar.dlu.edu.vn:123456789-2076 |
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Thư viện Trường Đại học Đà Lạt |
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Gate-oxide scaling SOI structure short-channel effect low-bandgap device tunnel field-effect transistor (TFET) |
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Gate-oxide scaling SOI structure short-channel effect low-bandgap device tunnel field-effect transistor (TFET) Nguyễn, Đăng Chiến Dao Thi Kim Anh Chun-Hsing Shih Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
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Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel performance of TFETs has to be characterized by both the off-current and the subthreshold swing because their physical origins are completely different. The reduction of gate-oxide thickness plays an important role in maintaining low subthreshold swing whereas it shows a less role in suppressing off-state leakage in short-channel TFETs with bulk and thin-body structures. When scaling the gate-oxide thickness, the short-channel effect is suppressed more effectively in thin-body TFETs than in bulk devices. Clearly understanding the roles of scaling gate-oxide thickness is necessary in designing advanced scaled TFET devices. |
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Journal article |
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Nguyễn, Đăng Chiến Dao Thi Kim Anh Chun-Hsing Shih |
| author_facet |
Nguyễn, Đăng Chiến Dao Thi Kim Anh Chun-Hsing Shih |
| author_sort |
Nguyễn, Đăng Chiến |
| title |
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
| title_short |
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
| title_full |
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
| title_fullStr |
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
| title_full_unstemmed |
Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
| title_sort |
roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors |
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2023 |
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https://scholar.dlu.edu.vn/handle/123456789/2076 |
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1785973035418779648 |
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oai:scholar.dlu.edu.vn:123456789-20762023-12-13T04:21:01Z Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors Nguyễn, Đăng Chiến Dao Thi Kim Anh Chun-Hsing Shih Gate-oxide scaling SOI structure short-channel effect low-bandgap device tunnel field-effect transistor (TFET) Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel performance of TFETs has to be characterized by both the off-current and the subthreshold swing because their physical origins are completely different. The reduction of gate-oxide thickness plays an important role in maintaining low subthreshold swing whereas it shows a less role in suppressing off-state leakage in short-channel TFETs with bulk and thin-body structures. When scaling the gate-oxide thickness, the short-channel effect is suppressed more effectively in thin-body TFETs than in bulk devices. Clearly understanding the roles of scaling gate-oxide thickness is necessary in designing advanced scaled TFET devices. 55 3 316-323 2023-04-28T09:45:17Z 2023-04-28T09:45:17Z 2017 Journal article Bài báo đăng trên tạp chí trong nước (có ISSN), bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2076 10.15625/2525-2518/55/3/8362 en Vietnam National Foundation for Science and Technology Development (NAFOSTED) Vietnam Journal of Science and Technology 0866-708X 103.02-2015.58 1. Kang S. M. and Leblebici Y. - CMOS digital integrated circuits, McGraw-Hill, 2003. 2. Sze S. M. and Ng K. K. - Physics of semiconductor devices, John Wiley & Sons, 2007. 3. Appenzeller J., Lin Y.-M., Knoch J. and Avouris Ph. - Band-to-band tunneling in carbon nanotube field-effect transistors, Phys. Rev. Lett. 93 (19) (2004) 196905. 4. Shih C.-H. and Chien N. 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P., Puers R. and Hoof C. V. - Pseudo-two-dimensional model for double-gate tunnel FETs considering the junctions depletion regions, IEEE Trans. Electron Devices 57 (4) (2010) 827-834. 16. Chien N. D. and Shih C.-H., Short-channel effect and device design of extremely scaled tunnel field-effect transistors, Microelectron. Reliab. 55 (1) (2015) 31-37. 17. Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2010. 18. Toh E.-H., Wang G. H., Samudra G. and Yeo Y.-C. - Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications, J. Appl. Phys. 103 (10) (2008) 104504. 19. Toh E.-H., Wang G. H., Chan L., Samudra G. and Yeo Y.-C. - Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization, Appl. Phys. Lett. 90 (26) (2007) 263507. 20. Omura Y., Horiguchi S., Tabe M. and Kishi K. - Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFET’s, IEEE Electron Device Lett. 14 (12) (1993) 569–571. 21. Krishnamohan T., Kim D., Nguyen C. D., Jungemann C., Nishi Y. and Saraswat K. C., High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: simulations, IEEE Trans. Electron Devices 53 (5) (2006) 1000-1009. 22. Kao K.-H., Verhulst A. S., Vandenberghe W. G., Sorée B., Groeseneken G. and Meyer K. D. - Direct and indirect band-to-band tunneling in germanium-based TFETs, IEEE Trans. Electron Devices 59 (2) (2012) 292-301. 23. Kane E. O. - Theory of tunneling, J. Appl. Phys. 31 (1) (1961) 83-91. 24. Tyagi M. S. - Determination of effective mass and the pair production energy for electrons in germanium from Zener diode characteristics, Jpn. J. Appl. Phys. 12 (1) (1973) 106-108. 25. Kim D., Krishnamohan T., Smith L., Philip Wong H.-S. and Saraswat K. 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