Roles of gate-oxide thickness reduction in scaling bulk and thin-body tunnel field-effect transistors
Tunnel field-effect transistor (TFET) has recently been considered as a promising candidate for low-power integrated circuits. In this paper, we present an adequate examination on the roles of gate-oxide thickness reduction in scaling bulk and thin-body TFETs. It is shown that the short-channel perf...
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| Hlavní autoři: | , , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
2023
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| Témata: | |
| On-line přístup: | https://scholar.dlu.edu.vn/handle/123456789/2076 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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