Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions

The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions f...

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Những tác giả chính: Nguyễn, Đăng Chiến, Chun-Hsing Shih
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: 2023
Những chủ đề:
Short-channel effect
silicon-germanium
heterojunction technique
sub-10-nm transistor
tunnel field-effect transistor (TFET)
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/2079
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-2079
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Short-channel effect
silicon-germanium
heterojunction technique
sub-10-nm transistor
tunnel field-effect transistor (TFET)
spellingShingle Short-channel effect
silicon-germanium
heterojunction technique
sub-10-nm transistor
tunnel field-effect transistor (TFET)
Nguyễn, Đăng Chiến
Chun-Hsing Shih
Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
description The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions for TFETs and investigate their short-channel effects by using two-dimensional simulations. It is shown that the semiconductor bandgap has to be properly considered together with the drain-induced barrier thinning in studying short-channel effects because scaling down the bandgap considerably deteriorates short-channel effects in TFETs. Among the basic configurations of Si/SiGe heterojunctions, the slantingly graded Si/SiGe heterostructure is most excellent in optimizing the electrical characteristics of the extremely scaled TFETs without short-channel effects. The slantingly graded Si/SiGe TFET with superior short-channel performance exhibits a potential device for low power and high packaging density integrated circuits.
format Journal article
author Nguyễn, Đăng Chiến
Chun-Hsing Shih
author_facet Nguyễn, Đăng Chiến
Chun-Hsing Shih
author_sort Nguyễn, Đăng Chiến
title Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
title_short Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
title_full Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
title_fullStr Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
title_full_unstemmed Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
title_sort short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded si/sige heterojunctions
publishDate 2023
url https://scholar.dlu.edu.vn/handle/123456789/2079
_version_ 1785973036916146176
spelling oai:scholar.dlu.edu.vn:123456789-20792023-12-13T04:19:18Z Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions Nguyễn, Đăng Chiến Chun-Hsing Shih Short-channel effect silicon-germanium heterojunction technique sub-10-nm transistor tunnel field-effect transistor (TFET) The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions for TFETs and investigate their short-channel effects by using two-dimensional simulations. It is shown that the semiconductor bandgap has to be properly considered together with the drain-induced barrier thinning in studying short-channel effects because scaling down the bandgap considerably deteriorates short-channel effects in TFETs. Among the basic configurations of Si/SiGe heterojunctions, the slantingly graded Si/SiGe heterostructure is most excellent in optimizing the electrical characteristics of the extremely scaled TFETs without short-channel effects. The slantingly graded Si/SiGe TFET with superior short-channel performance exhibits a potential device for low power and high packaging density integrated circuits. 100 857-866 2023-04-28T10:05:50Z 2023-04-28T10:05:50Z 2016 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2079 10.1016/j.spmi.2016.10.057 en Vietnam National Foundation for Science and Technology Development (NAFOSTED) Vietnam Ministry of Education and Training (MOET) Superlattices and Microstructures 2773-0131 103.02-2015.58 B2016-03 [1] W.Y. Choi, B.-G. Park, J.D. Lee, T.-J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec, IEEE Electron Device Lett 28 (2007) 743-745. [2] H. 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