Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions f...
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| Những tác giả chính: | , |
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
2023
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| נושאים: | |
| גישה מקוונת: | https://scholar.dlu.edu.vn/handle/123456789/2079 |
| תגים: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| סיכום: | The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions for TFETs and investigate their short-channel effects by using two-dimensional simulations. It is shown that the semiconductor bandgap has to be properly considered together with the drain-induced barrier thinning in studying short-channel effects because scaling down the bandgap considerably deteriorates short-channel effects in TFETs. Among the basic configurations of Si/SiGe heterojunctions, the slantingly graded Si/SiGe heterostructure is most excellent in optimizing the electrical characteristics of the extremely scaled TFETs without short-channel effects. The slantingly graded Si/SiGe TFET with superior short-channel performance exhibits a potential device for low power and high packaging density integrated circuits. |
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