Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
The heterojunction technique has recently been considered as an effective approach to simultaneously achieve a high on-current and low ambipolar off-leakage in tunnel field-effect transistors (TFETs). In this paper, we propose the various configurations of abrupt and graded Si/SiGe heterojunctions f...
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| Päätekijät: | , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
2023
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| Aiheet: | |
| Linkit: | https://scholar.dlu.edu.vn/handle/123456789/2079 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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