Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximati...

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Những tác giả chính:	Nguyễn, Đăng Chiến, Chun-Hsing Shih, Phù, Chí Hòa, Nguyen Hong Minh, Dương, Thị Thanh Hiên, Le Hong Nhung
Định dạng:	Journal Article
Ngôn ngữ:	English
Được phát hành:	2023
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/2080
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spelling	oai:scholar.dlu.edu.vn:123456789-20802024-03-01T03:59:05Z Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors Nguyễn, Đăng Chiến Chun-Hsing Shih Phù, Chí Hòa Nguyen Hong Minh Dương, Thị Thanh Hiên Le Hong Nhung The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices. 726 012002 2023-04-28T10:12:54Z 2023-04-28T10:12:54Z 2016 Journal Article Bài báo đăng trên tạp chí thuộc SCOPUS, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2080 10.1088/1742-6596/726/1/012002 en Vietnam National Foundation for Science and Technology Development (NAFOSTED) Journal of Physics: Conference Series 3rd International Workshop on Theoretical and Computational Physics: Complex Systems and Interdisciplinary Physics (IWTCP-3) and 40th National Conference on Theoretical Physics (NCTP-40) 1742-6588 103.02-2015.58 [1] Baba T 1992 Jpn. J. Appl. Phys. 31, L455 [2] Appenzeller J, Lin Y-M, Knoch J and Avouris Ph 2004 Phys. Rev. Lett. 93 196905 [3] Zhang Q, Zhao W and Seabaugh S A 2006 IEEE Electron Device Lett. 27 297 [4] Krishnamohan T, Donghyun K, Raghunathan S and Saraswat K 2008 Tech. Dig. IEEE Int. Electron Devices Meeting (15-17 December 2008, San Francisco) p 1 [5] 2013 International Technology Roadmap for Semiconductor [6] Reddick W M and Amaratunga G A J 1995 Appl. Phys. Lett. 67 494 [7] Wang P-F, Hilsenbeck K, Nirschl Th, Oswald M, Stepper Ch, Weis M, Schmitt-Landsiedel D and Hansch W 2004 Solid-State Electron. 48 2281 [8] Ionescu A M and Riel H 2011 Nature 479 329 [9] Zhao Q T et al. 2015 IEEE Journal of Electron Devices Society 3 103 [10] Shin M 2009 J. Appl. Phys. 106 054505 [11] Luisier M and Klimeck G 2009 IEEE Electron Device Lett. 30 602 [12] Kane E O 1961 J. Appl. Phys. 31 83 [13] 2010 Synopsys MEDICI User’s Manual (California: Synopsys Inc.) [14] Nayfeh O M, Hoyt J L and Antoniadis D A 2009 IEEE Trans. Electron Devices 56 2264 [15] Shih C-H and Chien N D 2013 J. Appl. Phys. 113 134507 [16] Peng J Z, Haddad S, Hsu J, Chen J, Longcor S and Chang C 1995 Proc. Int. Conf. Solid-State and Integrated Circuit Technology (24-28 Oct 1995, Beijing) p 141 [17] Kao K-H, Verhulst A S, Vandenberghe W G, Sorée B, Groeseneken G and Meyer K D 2012 IEEE Trans. Electron Devices 59 292 [18] Hurkx G A M 1989 Solid-State Electron. 32 665 [19] Shih C-H and Chien N D 2014 J. Appl. Phys. 115 014507 [20] Shih C-H and Chien N D 2014 IEEE Trans. Electron Devices 61 1907 [21] Moll J L 1970 Physics of Semiconductors (New York: McGraw-Hill) pp 252-255 [22] Pierret R F 1970 Semiconductor Device Fuldamentals (USA: Addison-Wesley Publishing Company) pp 209-225 [23] Logan R A and Chynoweth A G 1963 Phys. Rev. 131 89 [24] Singh Tyagi M 1968 Solid-State Electron. 11 99 [25] Fair R B and Wivell H W 1976 IEEE Trans. Electron Devices 23 512
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
description	The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices.
format	Journal Article
author	Nguyễn, Đăng Chiến Chun-Hsing Shih Phù, Chí Hòa Nguyen Hong Minh Dương, Thị Thanh Hiên Le Hong Nhung
spellingShingle	Nguyễn, Đăng Chiến Chun-Hsing Shih Phù, Chí Hòa Nguyen Hong Minh Dương, Thị Thanh Hiên Le Hong Nhung Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
author_facet	Nguyễn, Đăng Chiến Chun-Hsing Shih Phù, Chí Hòa Nguyen Hong Minh Dương, Thị Thanh Hiên Le Hong Nhung
author_sort	Nguyễn, Đăng Chiến
title	Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
title_short	Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
title_full	Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
title_fullStr	Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
title_full_unstemmed	Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
title_sort	theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling kane model for low bandgap semiconductors
publishDate	2023
url	https://scholar.dlu.edu.vn/handle/123456789/2080
_version_	1798256948186972160

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

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