Re-evaluating the volume effect in double-gate tunnel field effect transistors
Tunnel field effect transistors (TFETs) exhibit a potential candidate for ultra-low power integrated circuits because the conduction mechanism of band-to-band tunneling (BTBT) allows their subthreshold swing less than the thermal limit of 60 mV/decade at room temperature. Like conventional MOSFETs,...
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| Hauptverfasser: | , , |
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| Format: | Conference paper |
| Sprache: | English |
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Nhà xuất bản Bách Khoa Hà Nội
2024
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| Online Zugang: | https://scholar.dlu.edu.vn/handle/123456789/3286 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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