Re-evaluating the volume effect in double-gate tunnel field effect transistors

Tunnel field effect transistors (TFETs) exhibit a potential candidate for ultra-low power integrated circuits because the conduction mechanism of band-to-band tunneling (BTBT) allows their subthreshold swing less than the thermal limit of 60 mV/decade at room temperature. Like conventional MOSFETs,...

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Những tác giả chính:	Bui Huu Thai, Chun-Hsing Shih, Nguyễn, Đăng Chiến
פורמט:	Conference paper
שפה:	English
יצא לאור:	Nhà xuất bản Bách Khoa Hà Nội 2024
נושאים:	Volume effect Thin film transistor Double-gate Band-to-band tunneling Tunnel FET
גישה מקוונת:	https://scholar.dlu.edu.vn/handle/123456789/3286
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Re-evaluating the volume effect in double-gate tunnel field effect transistors

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