Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

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Những tác giả chính: Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: Springer Nature 2024
Những chủ đề:
Hetero-gate dielectric
High-k gate dielectric
Band-to-band tunneling
Tunnel field-effect transistor
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3290
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-3290
record_format dspace
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
topic Hetero-gate dielectric
High-k gate dielectric
Band-to-band tunneling
Tunnel field-effect transistor
spellingShingle Hetero-gate dielectric
High-k gate dielectric
Band-to-band tunneling
Tunnel field-effect transistor
Chun-Hsing Shih
Nguyễn, Đăng Chiến
Trần, Hữu Duy
Phan, Văn Chuân
Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
description The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance the electrical characteristics of TFETs with different ratios of low- and high-k equivalent oxide thicknesses (EOT). The on-current enhancement by the source-side dielectric heterojunction, which directly modulates the on-state tunnel width, was much larger than that by the drain-side dielectric heterojunction, which indirectly affects the on-current by modulating the subthreshold tunnel width. The subthreshold swing is improved by the formation of a conduction band well near the source-channel junction. However, the swing improvement is limited by the hump effect when this local potential well approaches the source. The optimal design of the HGD structure and the maximal enhancement of on-current considerably depend on the EOT ratio of low- and high-k dielectrics. The on-current is most enhanced by the optimized HGD structure at a low/high-k EOT ratio of ten times, that is, approximately 160% of the on-current of the uniform high-k TFET counterpart. Due to the continuous trend of increasing the k-values or scaling EOTs, understanding the dependence of device physics and design on the low/high-k EOT ratio is crucial to optimize the performance of HGD-TFETs.
format Journal article
author Chun-Hsing Shih
Nguyễn, Đăng Chiến
Trần, Hữu Duy
Phan, Văn Chuân
author_facet Chun-Hsing Shih
Nguyễn, Đăng Chiến
Trần, Hữu Duy
Phan, Văn Chuân
author_sort Chun-Hsing Shih
title Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
title_short Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
title_full Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
title_fullStr Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
title_full_unstemmed Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
title_sort device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k eot ratios
publisher Springer Nature
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3290
_version_ 1798256977968627712
spelling oai:scholar.dlu.edu.vn:123456789-32902024-03-01T03:50:47Z Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios Chun-Hsing Shih Nguyễn, Đăng Chiến Trần, Hữu Duy Phan, Văn Chuân Hetero-gate dielectric High-k gate dielectric Band-to-band tunneling Tunnel field-effect transistor The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance the electrical characteristics of TFETs with different ratios of low- and high-k equivalent oxide thicknesses (EOT). The on-current enhancement by the source-side dielectric heterojunction, which directly modulates the on-state tunnel width, was much larger than that by the drain-side dielectric heterojunction, which indirectly affects the on-current by modulating the subthreshold tunnel width. The subthreshold swing is improved by the formation of a conduction band well near the source-channel junction. However, the swing improvement is limited by the hump effect when this local potential well approaches the source. The optimal design of the HGD structure and the maximal enhancement of on-current considerably depend on the EOT ratio of low- and high-k dielectrics. The on-current is most enhanced by the optimized HGD structure at a low/high-k EOT ratio of ten times, that is, approximately 160% of the on-current of the uniform high-k TFET counterpart. Due to the continuous trend of increasing the k-values or scaling EOTs, understanding the dependence of device physics and design on the low/high-k EOT ratio is crucial to optimize the performance of HGD-TFETs. 126 66 1-11 2024-03-01T03:50:44Z 2024-03-01T03:50:44Z 2020 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3290 10.1007/s00339-019-3246-9 en Nghiên cứu và thiết kế các transistor trường xuyên hầm với cấu trúc điện môi cực cổng dị chất Applied Physics A 0947-8396 B2019-DLA-05 [1] IEEE International Roadmap for Devices and Systems (IRDS), 2018. [Online] Available at: http://irds.ieee.org/ [2] J. Appenzeller, Y.-M. Lin, J. Knoch, Ph. Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 93, 196905 (2004) [3] W.Y. Choi, B.-G. Park, J.D. Lee, T.-J.K. Liu, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. 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