Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios

The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...

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Hlavní autoři: Chun-Hsing Shih, Nguyễn, Đăng Chiến, Trần, Hữu Duy, Phan, Văn Chuân
Médium: Journal article
Jazyk:English
Vydáno: Springer Nature 2024
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On-line přístup:https://scholar.dlu.edu.vn/handle/123456789/3290
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