Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...
Zapisane w:
| Główni autorzy: | , , , |
|---|---|
| Format: | Journal article |
| Język: | English |
| Wydane: |
Springer Nature
2024
|
| Hasła przedmiotowe: | |
| Dostęp online: | https://scholar.dlu.edu.vn/handle/123456789/3290 |
| Etykiety: |
Dodaj etykietę
Nie ma etykietki, Dołącz pierwszą etykiete!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|