Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios
The hetero-gate dielectric (HGD) structure was recently experimentally demonstrated to enhance the electrical performance of tunnel field-effect transistors (TFETs). This study examined the mechanisms underlying the HGD structure functioning and investigated the design of the structure to enhance th...
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| Главные авторы: | , , , |
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| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
Springer Nature
2024
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/3290 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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