Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
The heterostructure technique has recently demonstrated an excellent solution to resolve the trade-off between on- and off-state currents in tunnel field-effect transistors (TFETs). This paper shows the weakness of abrupt heterojunctions and explores the physics of drive current enhancement as well...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , |
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| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
AIP Publishing
2024
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| অনলাইন ব্যবহার করুন: | https://scholar.dlu.edu.vn/handle/123456789/3293 |
| ট্যাগগুলো: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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