Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach

The heterostructure technique has recently demonstrated an excellent solution to resolve the trade-off between on- and off-state currents in tunnel field-effect transistors (TFETs). This paper shows the weakness of abrupt heterojunctions and explores the physics of drive current enhancement as well...

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Những tác giả chính:	Nguyễn, Đăng Chiến, Chun-Hsing Shih, Luu The Vinh
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	AIP Publishing 2024
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3293
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spelling	oai:scholar.dlu.edu.vn:123456789-32932024-03-01T07:09:07Z Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach Nguyễn, Đăng Chiến Chun-Hsing Shih Luu The Vinh The heterostructure technique has recently demonstrated an excellent solution to resolve the trade-off between on- and off-state currents in tunnel field-effect transistors (TFETs). This paper shows the weakness of abrupt heterojunctions and explores the physics of drive current enhancement as well as generalizes the proposed graded heterojunction approach in both n-type and p-type TFETs. It is shown that the presence of thermal emission barriers formed by abrupt band offsets is the physical reason of the on-current lowering observed in abrupt heterojunction TFETs. By employing graded heterojunctions in TFETs, the thermal emission barriers for electrons and holes are completely eliminated to narrow the tunnel widths in n-type and p-type TFETs, respectively. With the significant improvement in on-current, this novel approach of graded heterojunctions provides an effective technique for enhancing the drive current in heterostructure-based TFET devices. 114 9 094507 2024-03-01T07:09:05Z 2024-03-01T07:09:05Z 2013 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3293 10.1063/1.4820011 en Journal of Applied Physics 0021-8979 1. W. Y. Choi, B.-G. Park, J. D. Lee, and T.-J. K. Liu, IEEE Electron Device Lett. 28, 743 (2007). 2. A. M. Ionescu and H. Riel, Nature 479, 329 (2011). 3. W. M. Reddick and G. A. J. Amaratunga, Appl. Phys. Lett. 67, 494 (1995). 4. P.-F. Wang, K. Hilsenbeck, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, Solid-State Electron. 48, 2281 (2004). 5. K. Boucart and A. M. Ionescu, Solid-State Electron. 51, 1500 (2007). 6. C.-H. Shih and N. D. Chien, IEEE Electron Device Lett. 32, 1498 (2011). 7. P.-F. Wang, Th. Nirschl, D. Schmitt-Landsiedel, W. Hansch, Solid-State Electron. 47, 1187 (2003). 8. A. S. Verhulst, W. G. Vandenberghe, K. Maex, and G. Groeseneken, Appl. Phys. Lett. 91, 053102 (2007). 9. E.-H. Toh, G. H. Wang, G. Samudra, and Y.-C. Yeo, J. Appl. Phys. 103, 104504 (2008). 10. O. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, IEEE Trans. Electron Devices 56, 2264 (2009). 11. S. Mookerjea, D. Mohata, T. Mayer, V. Narayanan, and S. Datta, IEEE Electron Device Lett. 31, 564 (2010). 12. M. Luisier and G. Klimeck, in Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, 2009, p. 1. 13. H. G. Virani, R. B. Rao, and A. Kottantharayil, Jpn. J. Appl. Phys. 49, 04DC12 (2010). 14. N. D. Chien, L. T. Vinh, N. V. Kien, J.-K. Hsia, T.-S. Kang, and C.-H. Shih, in Proceedings of International Symposium on Next-Generation Electronics, 2013, p. 67. 15. C.-H. Shih and N. D. Chien, J. Appl. Phys. 113, 134507 (2013). 16. Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2010. 17. E.-H. Toh, G. H. Wang, L. Chen, G. Samudra, and Y.-C. Yeo, Appl. Phys. Lett. 90, 263507 (2007). 18. E.-H. Toh, G. H. Wang, G. Samudra, and Y.-C. Yeo, Appl. Phys. Lett. 91, 243505 (2007). 19. E. O. Kane, J. Appl. Phys. 32, 83 (1961). 20. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996). 21. M. Luisier and G. Klimeck, J. Appl. Phys. 107, 084507 (2010). 22. N. D. Chien, C.-H. Shih, L. T. Vinh, N. V. Kien, in Proceedings of International Conference on IC Design and Technology, 2013, p. 73. 23. D. Leonelli, A. Vandooren, R. Rooyackers, A. S. Verhulst, S. D. Gendt, M. M. Heyns, and G. Groeseneken, Jpn. J. Appl. Phys. 50, 04DC05 (2011). 24. T. Krishnamohan, K. Donghyun, S. Raghunathan, and K. Saraswat, in Technical Digest of International Electron Devices Meeting, 2008, p. 1. AIP Publishing USA
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
description	The heterostructure technique has recently demonstrated an excellent solution to resolve the trade-off between on- and off-state currents in tunnel field-effect transistors (TFETs). This paper shows the weakness of abrupt heterojunctions and explores the physics of drive current enhancement as well as generalizes the proposed graded heterojunction approach in both n-type and p-type TFETs. It is shown that the presence of thermal emission barriers formed by abrupt band offsets is the physical reason of the on-current lowering observed in abrupt heterojunction TFETs. By employing graded heterojunctions in TFETs, the thermal emission barriers for electrons and holes are completely eliminated to narrow the tunnel widths in n-type and p-type TFETs, respectively. With the significant improvement in on-current, this novel approach of graded heterojunctions provides an effective technique for enhancing the drive current in heterostructure-based TFET devices.
format	Journal article
author	Nguyễn, Đăng Chiến Chun-Hsing Shih Luu The Vinh
spellingShingle	Nguyễn, Đăng Chiến Chun-Hsing Shih Luu The Vinh Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
author_facet	Nguyễn, Đăng Chiến Chun-Hsing Shih Luu The Vinh
author_sort	Nguyễn, Đăng Chiến
title	Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
title_short	Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
title_full	Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
title_fullStr	Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
title_full_unstemmed	Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
title_sort	drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
publisher	AIP Publishing
publishDate	2024
url	https://scholar.dlu.edu.vn/handle/123456789/3293
_version_	1798256979578191872

Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach

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