Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions
Using graded silicon-germanium heterojunctions, the green tunnel field-effect transistor (TFET) can be scaled down into sub-10 nm regimes without short-channel effects. This work elucidates numerically the physical operation and device design of extremely short-channel TFETs with graded silicon-germ...
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| Những tác giả chính: | , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
AIP Publishing
2024
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| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3295 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | Using graded silicon-germanium heterojunctions, the green tunnel field-effect transistor (TFET) can be scaled down into sub-10 nm regimes without short-channel effects. This work elucidates numerically the physical operation and device design of extremely short-channel TFETs with graded silicon-germanium heterojunctions for future low-power and high-performance applications. Critical device factors, such as the drain profile and bandgap engineering, were examined to generate favorable characteristics in the on-current, on-off switching, and off-leakage of very short TFETs. A mildly doped drain with a pure Ge source is preferred in designing the graded TFETs to optimize a desirable green transistor for low-power integrated circuits. |
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