Negative capacitance in short-channel tunnel field-effect transistors
Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the sca...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , |
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| Fformat: | Conference paper |
| Iaith: | English |
| Cyhoeddwyd: |
IEEE Publishing
2024
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| Mynediad Ar-lein: | https://scholar.dlu.edu.vn/handle/123456789/3316 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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