Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory

The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler–Nordheim (FN) tunneling gate current of nand-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and erasing operations. The fringing field effect and...

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Những tác giả chính:	Ji-Ting Liang, Chun-Hsing Shih, Wei Chang, Yan-Xiang Luo, Ming-Kun Huang, Nguyễn, Đăng Chiến, Wen-Fa Wu, Sau-Mou Wu, Chenhsin Lien, Riichiro Shirota, Chiu-Tsung Huang, Su Lu, Alex Wang
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	IEEE Publishing 2024
Những chủ đề:	Edge encroachment Fowler–Nordheim (FN) tunneling Gate current NAND-type Flash Tunnel oxide
Truy cập trực tuyến:	https://scholar.dlu.edu.vn/handle/123456789/3300
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spelling	oai:scholar.dlu.edu.vn:123456789-33002024-03-01T08:12:14Z Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory Ji-Ting Liang Chun-Hsing Shih Wei Chang Yan-Xiang Luo Ming-Kun Huang Nguyễn, Đăng Chiến Wen-Fa Wu Sau-Mou Wu Chenhsin Lien Riichiro Shirota Chiu-Tsung Huang Su Lu Alex Wang Edge encroachment Fowler–Nordheim (FN) tunneling Gate current NAND-type Flash Tunnel oxide The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler–Nordheim (FN) tunneling gate current of nand-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and erasing operations. The fringing field effect and tunnel oxide with trapezoidal edge are considered in the determination of physical gate current in which a conformal-mapping method is used to estimate the contribution of the fringing fields. These analytical results are confirmed using 2-D device simulations and experimental measurements. The results show that the overlapped encroachment causes an exponential degradation of intrinsic FN tunneling current. Preventing the encroachment of lateral edges resulting from overall tunnel-oxide enlargement is critical to ensuring normal programming and erasing speeds in future nand-type Flash cells. 58 4 1257-1263 2024-03-01T08:12:08Z 2024-03-01T08:12:08Z 2011 Journal article Bài báo đăng trên tạp chí thuộc ISI, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/3300 10.1109/TED.2011.2105492 en IEEE Transactions on Electron Devices 0018-9383 [1] International Technology Roadmap for Semiconductor, 2007 edition. [2] Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. Cambridge, U.K.: Cambridge Univ. Press, 1998. [3] K. Prall, “Scaling non-volatile memory below 30 nm,” in Proc. IEEE NVSMW, 2007, pp. 5–9. [4] H. Yang, H. Kim, S.-I. Park, J. Kim, S.-H. Lee, J.-K. Choi, D. Hwang, C. Kim, M. Park, K.-H. Lee, Y.-K. Park, J. K. Shin, and J.-T. Kong, “Reliability issues and models of sub-90nm NAND Flash memory cells,” inProc. IEEE Int. Conf. Solid-State Integr.-Circuit Technol., 2006, pp. 760–762. [5] B. Kim, W.-H. Kwon, C.-K. Baek, Y. Son, C.-K. Park, K. Kim, and D. M. Kim, “Edge profile effect of tunnel oxide on erase thresholdvoltage distributions in Flash memory cells,” IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3012–3019, Dec. 2006. [6] J. Lee, J. Kim, W. Lee, S. Lee, H. Lim, J. Lee, S. Nam, H. Lee, and C. Song, “Effect of STI shape and tunneling oxide thinning on cell Vth variation in the flash memory,” inProc. IEEE IRPS, 2005, pp. 670–671. [7] M. Park, K. Suh, K. Kim, S.-H. Hur, K. Kim, and W.-S. Lee, “The effect of trapped charge distributions on data retention characteristics of NAND Flash memory cells,”IEEE Electron Device Lett., vol. 28, no. 8, pp. 750–752, Aug. 2007. [8] H. Watanabe, K. Shimizu, Y. Takeuchi, and S. Aritome, “Corner-rounded shallow trench isolation technology to reduce the stress-induced tunnel oxide leakage current for highly reliable flash memories,” inIEDM Tech. Dig., 1996, pp. 833–836. [9] C.-Y. Ho and C.-H. Shih, “Edge encroachments and suppressions of tunnel oxide in Flash memory cells,” IEEE Electron Device Lett., vol. 29, no. 10, pp. 1159–1162, Oct. 2008. [10] M. Park, C.-S. Lee, S.-H. Hur, K. Kim, and W.-S. Lee, “The effect of field oxide recess on cell VTH distribution of NAND Flash cell arrays,” IEEE Electron Device Lett., vol. 29, no. 9, pp. 1050–1052, Sep. 2008. [11] Synopsys MEDICI User’s Manual. Mountain View, CA: Synopsys Inc., 2006. [12] A. Bansal, B. C. Paul, and K. Roy, “An analytical fringe capacitance model for interconnects using conformal mapping,” IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 25, no. 12, pp. 2765–2774, Dec. 2006. [13] D. A. Buchanan, D. J. DiMaria, C.-A. Chang, and Y. Taur, “Defect generation in 3.5 nm silicon dioxide films,” Appl. Phys. Lett., vol. 65, no. 14, pp. 1820–1822, Oct. 1994. IEEE Publishing USA
institution	Thư viện Trường Đại học Đà Lạt
collection	Thư viện số
language	English
topic	Edge encroachment Fowler–Nordheim (FN) tunneling Gate current NAND-type Flash Tunnel oxide
spellingShingle	Edge encroachment Fowler–Nordheim (FN) tunneling Gate current NAND-type Flash Tunnel oxide Ji-Ting Liang Chun-Hsing Shih Wei Chang Yan-Xiang Luo Ming-Kun Huang Nguyễn, Đăng Chiến Wen-Fa Wu Sau-Mou Wu Chenhsin Lien Riichiro Shirota Chiu-Tsung Huang Su Lu Alex Wang Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
description	The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler–Nordheim (FN) tunneling gate current of nand-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and erasing operations. The fringing field effect and tunnel oxide with trapezoidal edge are considered in the determination of physical gate current in which a conformal-mapping method is used to estimate the contribution of the fringing fields. These analytical results are confirmed using 2-D device simulations and experimental measurements. The results show that the overlapped encroachment causes an exponential degradation of intrinsic FN tunneling current. Preventing the encroachment of lateral edges resulting from overall tunnel-oxide enlargement is critical to ensuring normal programming and erasing speeds in future nand-type Flash cells.
format	Journal article
author	Ji-Ting Liang Chun-Hsing Shih Wei Chang Yan-Xiang Luo Ming-Kun Huang Nguyễn, Đăng Chiến Wen-Fa Wu Sau-Mou Wu Chenhsin Lien Riichiro Shirota Chiu-Tsung Huang Su Lu Alex Wang
author_facet	Ji-Ting Liang Chun-Hsing Shih Wei Chang Yan-Xiang Luo Ming-Kun Huang Nguyễn, Đăng Chiến Wen-Fa Wu Sau-Mou Wu Chenhsin Lien Riichiro Shirota Chiu-Tsung Huang Su Lu Alex Wang
author_sort	Ji-Ting Liang
title	Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
title_short	Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
title_full	Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
title_fullStr	Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
title_full_unstemmed	Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory
title_sort	impact of edge encroachment on programming and erasing gate current in nand-type flash memory
publisher	IEEE Publishing
publishDate	2024
url	https://scholar.dlu.edu.vn/handle/123456789/3300
_version_	1798256982816194560

Impact of edge encroachment on programming and erasing gate current in NAND-type Flash memory

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