Threshold voltage of Ge channel MOSFETs with high-k gate insulator
As the MOSFET devices scale into nanoscale regime, it is increasingly difficult to enhance the performance of silicon CMOS devices through traditional scaling approaches. Ge channel MOSFETs with high -k gate insulator become one of most attracting candidates for the use in fut...
Tallennettuna:
| Päätekijät: | , , , |
|---|---|
| Aineistotyyppi: | Conference paper |
| Kieli: | English |
| Julkaistu: |
Sweden
2024
|
| Linkit: | https://scholar.dlu.edu.vn/handle/123456789/3303 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|