Threshold voltage of Ge channel MOSFETs with high-k gate insulator
As the MOSFET devices scale into nanoscale regime, it is increasingly difficult to enhance the performance of silicon CMOS devices through traditional scaling approaches. Ge channel MOSFETs with high -k gate insulator become one of most attracting candidates for the use in fut...
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Sweden
2024
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oai:scholar.dlu.edu.vn:123456789-33032024-04-10T10:35:27Z Threshold voltage of Ge channel MOSFETs with high-k gate insulator Chun-Hsing Shih Jhong-Sheng Wang Nguyễn, Đăng Chiến Sau-Mou Wu As the MOSFET devices scale into nanoscale regime, it is increasingly difficult to enhance the performance of silicon CMOS devices through traditional scaling approaches. Ge channel MOSFETs with high -k gate insulator become one of most attracting candidates for the use in future CMOS technologies because of the high driving current enhancement [1,2]. However, the physical modeling of Ge channel MOSFETs suffers from severe challenges never seen before. Determining the physical threshold voltage remains problematic due to the use of Ge channel and high-k gate dielectrics. This work elucidates the difficulties in applying the conventional 2Psi threshold voltage model to high-k Ge-channel MOSFETs, and presents a physical drift-current threshold voltage model for the future applications of Ge MOSFETs. 2024-03-02T09:32:59Z 2024-03-02T09:32:59Z 2010 Conference paper Bài báo đăng trên KYHT trong và ngoài nước (không có ISBN) https://scholar.dlu.edu.vn/handle/123456789/3303 en International SiGe Technology and Device Meeting (ISTDM) [1] H. Shang et al., IBM Journal of Research and Development, p. 377-86, 2006. [2] C. O. Chui et al., IEDM Tech. Dig., pp. 437-440, 2002. [3] Y. Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge, 1998. [4] Synopsys MEDICI User’s Manual, Synopsys Inc., Mountain View, CA, 2006. [5] Stanley Wolf, Silicon processing for the VLSI era, Vol. 3: The submicron MOSFET, Lattice Press, 1995. Sweden |
| institution |
Thư viện Trường Đại học Đà Lạt |
| collection |
Thư viện số |
| language |
English |
| description |
As the MOSFET devices scale into nanoscale regime, it is increasingly difficult to enhance the performance of silicon CMOS devices through traditional scaling approaches. Ge channel MOSFETs with high -k gate insulator become one of most attracting candidates for the use in future CMOS technologies because of the high driving current enhancement [1,2]. However, the physical modeling of Ge channel MOSFETs suffers from severe challenges never seen before. Determining the physical threshold voltage remains problematic due to the use of Ge channel and high-k gate dielectrics. This work elucidates the difficulties in applying the conventional 2Psi threshold voltage model to high-k Ge-channel MOSFETs, and presents a physical drift-current threshold voltage model for the future applications of Ge MOSFETs. |
| format |
Conference paper |
| author |
Chun-Hsing Shih Jhong-Sheng Wang Nguyễn, Đăng Chiến Sau-Mou Wu |
| spellingShingle |
Chun-Hsing Shih Jhong-Sheng Wang Nguyễn, Đăng Chiến Sau-Mou Wu Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| author_facet |
Chun-Hsing Shih Jhong-Sheng Wang Nguyễn, Đăng Chiến Sau-Mou Wu |
| author_sort |
Chun-Hsing Shih |
| title |
Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| title_short |
Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| title_full |
Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| title_fullStr |
Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| title_full_unstemmed |
Threshold voltage of Ge channel MOSFETs with high-k gate insulator |
| title_sort |
threshold voltage of ge channel mosfets with high-k gate insulator |
| publisher |
Sweden |
| publishDate |
2024 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/3303 |
| _version_ |
1798256984051417088 |