Ambipolar conduction in recessed channel Schottky barrier MOSFETs
The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...
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| Những tác giả chính: | , , , |
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| Định dạng: | Conference paper |
| Ngôn ngữ: | English |
| Được phát hành: |
IEEE Publishing
2024
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| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3304 |
| Các nhãn: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. However, the parasitic recessed channel leads to a lower on-state driving current. The depth of the recessed channel must be well designed to have good current characteristics in RC-SBMOS. Importantly, the recessed channel structure has only a mild effect on suppressing the off-state ambipolar hole current. |
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