Ambipolar conduction in recessed channel Schottky barrier MOSFETs

Ambipolar conduction in recessed channel Schottky barrier MOSFETs

The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. H...

Mô tả đầy đủ

Đã lưu trong:
Chi tiết về thư mục
Những tác giả chính: Chun-Hsing Shih, Shao-Hui Yang, Ruei-Kai Shia, Nguyễn, Đăng Chiến
Định dạng: Conference paper
Ngôn ngữ:English
Được phát hành: IEEE Publishing 2024
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/3304
Các nhãn: Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
id oai:scholar.dlu.edu.vn:123456789-3304
record_format dspace
spelling oai:scholar.dlu.edu.vn:123456789-33042024-03-02T09:45:17Z Ambipolar conduction in recessed channel Schottky barrier MOSFETs Chun-Hsing Shih Shao-Hui Yang Ruei-Kai Shia Nguyễn, Đăng Chiến The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. However, the parasitic recessed channel leads to a lower on-state driving current. The depth of the recessed channel must be well designed to have good current characteristics in RC-SBMOS. Importantly, the recessed channel structure has only a mild effect on suppressing the off-state ambipolar hole current. 189-190 2024-03-02T09:45:13Z 2024-03-02T09:45:13Z 2010 Conference paper Bài báo đăng trên KYHT quốc tế (có ISBN) 978-1-4244-7334-2 1097-2137 https://scholar.dlu.edu.vn/handle/123456789/3304 10.1109/COMMAD.2010.5699732 en Conference on Optoelectronic and Microelectronic Materials and Devices [1] C. Wang, J. P. Synder, and J. R. Tucker, "Sub-40nm PtSi Schottky source/drain metal-oxide­ semiconductor field-effect-transistors," Appl. Phys. Lett., pp. 1174-1176, Feb. 1999. [2] J. M. Larson and J. P. Snyder, "Overview and status of metal SID Schottky barrier MOSFET technology," IEEE TED, pp. 1048-1058, May 2006. [3] J. Guo and M. S. Lundstrom, "A computational study of thin-body, double gate, Schottky barrier MOSFETs," IEEE TED, pp. 1897-1902, Nov. 2002. [4] M. Nishisaka, S. Matsumoto, and T. Asano, "Schottky source/drain SOl MOSFET with shallow doped extension," Jpn. J. Appl. Phys., pp. 2009-2013, Apr. 2003. [5] Paul-Henri Bricout and Emmanuel Dubois, "Short­Channel Effect Immunity and Current Capability of Sub-0.1-Micron MOSFETs Using a Recessed Channel," IEEE TED, pp. 1251-1255, August 1996. [6] Yaohui Zhang, Ruigangi U, Sung-Kwon Hong and Kang L. Wang, "Nano-Scale Recessed Asymmetric Schottky Contacted CMOS," in IEEE-Nano 2001, pp. 195-200. [7] Synopsys MEDICI User's Manual, CA, 2006. [8] Chun-Hsing Shih and Sheng-Pin Yeh, "Device Considerations and Design Optimizations for Dopant Segregated Schottky Barrier MOSFETs," Semicondutor Science and Technology, 125033, Dec. 2008. IEEE Publishing USA
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
description The ambipolar conduction is numerically studied in recessed channel Schottky barrier MOSFET (RC-SBMOS). The results show that the recessed channel structure can alleviate the lateral field penetrations coming from drain electrode. Thus, it is rather insensitive to the variations of drain voltages. However, the parasitic recessed channel leads to a lower on-state driving current. The depth of the recessed channel must be well designed to have good current characteristics in RC-SBMOS. Importantly, the recessed channel structure has only a mild effect on suppressing the off-state ambipolar hole current.
format Conference paper
author Chun-Hsing Shih
Shao-Hui Yang
Ruei-Kai Shia
Nguyễn, Đăng Chiến
spellingShingle Chun-Hsing Shih
Shao-Hui Yang
Ruei-Kai Shia
Nguyễn, Đăng Chiến
Ambipolar conduction in recessed channel Schottky barrier MOSFETs
author_facet Chun-Hsing Shih
Shao-Hui Yang
Ruei-Kai Shia
Nguyễn, Đăng Chiến
author_sort Chun-Hsing Shih
title Ambipolar conduction in recessed channel Schottky barrier MOSFETs
title_short Ambipolar conduction in recessed channel Schottky barrier MOSFETs
title_full Ambipolar conduction in recessed channel Schottky barrier MOSFETs
title_fullStr Ambipolar conduction in recessed channel Schottky barrier MOSFETs
title_full_unstemmed Ambipolar conduction in recessed channel Schottky barrier MOSFETs
title_sort ambipolar conduction in recessed channel schottky barrier mosfets
publisher IEEE Publishing
publishDate 2024
url https://scholar.dlu.edu.vn/handle/123456789/3304
_version_ 1798256984432050176

Những quyển sách tương tự