Proper Determination of Tunnel Model Parameters for Indirect Band-to-Band Tunneling in Compressively Strained Si1-xGex TFETs
Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane’s tunnel model has been widely used in numerical simulations and physical models to pred...
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| Auteurs principaux: | , , , , , |
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| Format: | Conference paper |
| Langue: | English |
| Publié: |
IEEE Publishing
2024
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| Accès en ligne: | https://scholar.dlu.edu.vn/handle/123456789/3306 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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