Proper Determination of Tunnel Model Parameters for Indirect Band-to-Band Tunneling in Compressively Strained Si1-xGex TFETs
Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane’s tunnel model has been widely used in numerical simulations and physical models to pred...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , |
|---|---|
| Μορφή: | Conference paper |
| Γλώσσα: | English |
| Έκδοση: |
IEEE Publishing
2024
|
| Διαθέσιμο Online: | https://scholar.dlu.edu.vn/handle/123456789/3306 |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
| Περίληψη: | Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane’s tunnel model has been widely used in numerical simulations and physical models to predict the tunneling current produced in the TFETs. This study examines the proper calculations of Kane’s model parameters appropriate for the indirect band-to-band tunneling generated in compressively strained Si1-xGex channel on Si-substrate. The calculated parameters were verified with the measured results from experimental TFETs. Good agreements are confirmed between the numerical and measured data without any fitting factors. |
|---|