Proper Determination of Tunnel Model Parameters for Indirect Band-to-Band Tunneling in Compressively Strained Si1-xGex TFETs
Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane’s tunnel model has been widely used in numerical simulations and physical models to pred...
Đã lưu trong:
| Những tác giả chính: | , , , , , |
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| Formáid: | Conference paper |
| Teanga: | English |
| Foilsithe: |
IEEE Publishing
2024
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| Rochtain Ar Líne: | https://scholar.dlu.edu.vn/handle/123456789/3306 |
| Clibeanna: |
Cuir Clib Leis
Gan Chlibeanna, Bí ar an gcéad duine leis an taifead seo a chlibeáil!
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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