Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain
This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....
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| Главные авторы: | , , , , |
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| Формат: | Conference paper |
| Язык: | English |
| Опубликовано: |
IEEE Publishing
2024
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| Предметы: | |
| Online-ссылка: | https://scholar.dlu.edu.vn/handle/123456789/3307 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Итог: | This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts. |
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