Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain

Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain

This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....

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Asıl Yazarlar: Jui-Kai Hsia, Chun-Hsing Shih, Ting-Shiuan Kang, Nguyễn, Đăng Chiến, Nguyen Van Kien
Materyal Türü: Conference paper
Dil:English
Baskı/Yayın Bilgisi: IEEE Publishing 2024
Konular:
SOl MOSFETs
Short-channel effect
Silicon -on-insulator
Shallow source/drain
Fringing field
Online Erişim:https://scholar.dlu.edu.vn/handle/123456789/3307
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
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Özet:This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts.

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