Fringing field and short channel effects in thin-body SOI MOSFETs with shallow source/drain
This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices....
Đã lưu trong:
| Những tác giả chính: | , , , , |
|---|---|
| 格式: | Conference paper |
| 語言: | English |
| 出版: |
IEEE Publishing
2024
|
| 主題: | |
| 在線閱讀: | https://scholar.dlu.edu.vn/handle/123456789/3307 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
| 總結: | This work explores numerically the short-channel effects in thin-body SOI MOSFETs with shallow source/drain architecture, where the junction depths are less than the associated silicon body thicknesses. Unique fringing field and short-channel behavior are observed in the unconventional SOI devices. Numerical results of the short-channel effects are compared with those in the conventional SOI MOSFETs. For given silicon body thicknesses, the shallow junction SOI devices exhibit the superior short-channel immunity over the conventional counterparts. |
|---|