Quantum Confinement Effect in Strained-Si¬1-xGex Double-Gate Tunnel Field-Effect Transistors
The energy bandgap is a key factor to determine the tunneling current in tunnel field-effect transistors (TFETs). This paper numerically investigates the effect of quantum confinement in the double-gate TFETs by evaluating the effective energy-band bandgap of the ultra-thin strained-Si1-xGex body....
Đã lưu trong:
| Những tác giả chính: | , , , |
|---|---|
| Format: | Conference paper |
| Sprog: | English |
| Udgivet: |
IEEE Publishing
2024
|
| Online adgang: | https://scholar.dlu.edu.vn/handle/123456789/3308 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|