Short-drain effect of 5 nm tunnel field-effect transistors
Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased dr...
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IEEE Publishing
2024
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oai:scholar.dlu.edu.vn:123456789-33102024-03-02T10:23:40Z Short-drain effect of 5 nm tunnel field-effect transistors Yu-Hsuan Chen Nguyễn, Đăng Chiến Jr-Jie Tsai Yan-Xiang Luo Chun-Hsing Shih Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect. 57-58 2024-03-02T10:23:32Z 2024-03-02T10:23:32Z 2015 Conference paper Bài báo đăng trên KYHT quốc tế (có ISBN) 978-4-8634-8538-9 https://scholar.dlu.edu.vn/handle/123456789/3310 en Silicon Nanoelectronics Workshop (SNW) [1] Dmitri E. Nikonov and Ian A. Young, “Overview of beyond-CMOS devices and a uniform methodology for their benchmarking,” Proc. of the IEEE, p. 2498, 2013. [2] L. Liu, D. Mohata, and S. Datta, “Scaling length theory of double-gate interband tunnel field-effect transistors,” IEEE Trans. Electron Devices, p. 902, 2012. [3] C.-H. Shih and N. V. Kien, “Sub-10-nm asymmetric junctionless tunnel field-effect transistors,” IEEE Journal of the Electron Devices Society, p. 128, 2014. [4] Synopsys Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, USA, 2010. IEEE Publishing USA |
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Thư viện Trường Đại học Đà Lạt |
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Thư viện số |
| language |
English |
| description |
Unique short-drain effect was reported in extremely scaled tunnel field-effect transistors. This study numerically elucidated the short-drain effect and the difference between the short-channel and short-drain effects. For the short-drain effect, the off-state barriers reduce because of decreased drain lengths, generating ambipolar off-state current and degraded short-channel effect. The shorter channel is, the more pronounced is the short-drain effect. |
| format |
Conference paper |
| author |
Yu-Hsuan Chen Nguyễn, Đăng Chiến Jr-Jie Tsai Yan-Xiang Luo Chun-Hsing Shih |
| spellingShingle |
Yu-Hsuan Chen Nguyễn, Đăng Chiến Jr-Jie Tsai Yan-Xiang Luo Chun-Hsing Shih Short-drain effect of 5 nm tunnel field-effect transistors |
| author_facet |
Yu-Hsuan Chen Nguyễn, Đăng Chiến Jr-Jie Tsai Yan-Xiang Luo Chun-Hsing Shih |
| author_sort |
Yu-Hsuan Chen |
| title |
Short-drain effect of 5 nm tunnel field-effect transistors |
| title_short |
Short-drain effect of 5 nm tunnel field-effect transistors |
| title_full |
Short-drain effect of 5 nm tunnel field-effect transistors |
| title_fullStr |
Short-drain effect of 5 nm tunnel field-effect transistors |
| title_full_unstemmed |
Short-drain effect of 5 nm tunnel field-effect transistors |
| title_sort |
short-drain effect of 5 nm tunnel field-effect transistors |
| publisher |
IEEE Publishing |
| publishDate |
2024 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/3310 |
| _version_ |
1798256987493892096 |