Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction an...
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| Những tác giả chính: | , , , , |
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| Định dạng: | Conference paper |
| Ngôn ngữ: | English |
| Được phát hành: |
IEEE Publishing
2024
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| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3315 |
| Các nhãn: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices. |
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