Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction an...
Đã lưu trong:
| Những tác giả chính: | , , , , |
|---|---|
| Định dạng: | Conference paper |
| Ngôn ngữ: | English |
| Được phát hành: |
IEEE Publishing
2024
|
| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3315 |
| Các nhãn: |
Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
| id |
oai:scholar.dlu.edu.vn:123456789-3315 |
|---|---|
| record_format |
dspace |
| spelling |
oai:scholar.dlu.edu.vn:123456789-33152024-03-02T11:56:06Z Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling Chun-Hsing Shih Ting-Shiuan Kang Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices. 53-54 2024-03-02T11:55:59Z 2024-03-02T11:55:59Z 2017 Conference paper Bài báo đăng trên KYHT quốc tế (có ISBN) 978-1-5386-4638-0 2161-4644 https://scholar.dlu.edu.vn/handle/123456789/3315 10.23919/SNW.2017.8242293 en Silicon Nanoelectronics Workshop (SNW) [I] A. Seabaugh, "The Tunneling Transistor," IEEE Spectrum, vol. 50, vo. 10, pp. 35-62, 2013. [2] J. M. Larson and J. P. Snyder, "Overview and statos of metal sm Schottky barrier MOSFET technology,"IEEE TED, vol. 53, pp. 1048-1058, May 2006. [3] Synopsys Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, USA, 2013. IEEE Publishing USA |
| institution |
Thư viện Trường Đại học Đà Lạt |
| collection |
Thư viện số |
| language |
English |
| description |
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices. |
| format |
Conference paper |
| author |
Chun-Hsing Shih Ting-Shiuan Kang Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến |
| spellingShingle |
Chun-Hsing Shih Ting-Shiuan Kang Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| author_facet |
Chun-Hsing Shih Ting-Shiuan Kang Yu-Hsuan Chen Hung-Jin Teng Nguyễn, Đăng Chiến |
| author_sort |
Chun-Hsing Shih |
| title |
Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| title_short |
Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| title_full |
Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| title_fullStr |
Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| title_full_unstemmed |
Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling |
| title_sort |
dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling |
| publisher |
IEEE Publishing |
| publishDate |
2024 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/3315 |
| _version_ |
1798256989616209920 |