Negative capacitance in short-channel tunnel field-effect transistors
Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the sca...
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2024
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oai:scholar.dlu.edu.vn:123456789-33162024-03-02T12:39:42Z Negative capacitance in short-channel tunnel field-effect transistors Hung-Jin Teng Yu-Hsuan Chen Nguyễn, Đăng Chiến Chun-Hsing Shih Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the scaled asymmetric junctionless TFETs preserve the short-channel benefits of using negative capacitance ferroelectric to ensure boosted on-current with minimized swing. 1-2 2024-03-02T12:39:35Z 2024-03-02T12:39:35Z 2019 Conference paper Bài báo đăng trên KYHT quốc tế (có ISBN) 978-4-8634-8702-4 2161-4636 https://scholar.dlu.edu.vn/handle/123456789/3316 10.23919/SNW.2019.8782929 en Silicon Nanoelectronics Workshop (SNW) [1] Dmitri E. Nikonov and Ian A. Young, “Overview of beyond-CMOS devices and a uniform methodology for their benchmarking,” Proc. of the IEEE, p. 2498, 2013. [2] L. Liu, D. Mohata, and S. Datta, “Scaling length theory of double-gate interband tunnel field-effect transistors,” IEEE Trans. Electron Devices, p. 902, 2012. [3] C. M. Hu, S. Salahuddin, C. I. Lin, and A. Khan, “0.2V Adiabatic NC-FinFET with 0.6mA/ m ION and 0.lnA/um IOFF,” IEEE Annual Device Research Conference, pp. 39-40, 2015. [4] M. Kobayashi and T. Hiramoto, “Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2V operation: Operation speed, material requirement and energy efficiency,” in VLSI Symp. Tech. Dig., pp. T212–T213, Jun. 2015. [5] C.-H. Shih and N.-V. Kien, “Sub-10-nm asymmetric junctionless tunnel field-effect transistors,” IEEE J. Electron. Devi., pp. 128-132, Jun. 2014. [6] Synopsys Sentaurus Device User Guide, Synopsys Inc., Mountain View, CA, USA, 2016. IEEE Publishing USA |
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Thư viện Trường Đại học Đà Lạt |
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Thư viện số |
| language |
English |
| description |
Based on band-to-band tunneling, tunnel field-effect transistors (TFETs) have demonstrated its small subthreshold swing for energy-efficient applications. This work explores the use of negative capacitance in extremely scaled short-channel TFETs. Against conventional MOSFETs and P-i-N TFETs, the scaled asymmetric junctionless TFETs preserve the short-channel benefits of using negative capacitance ferroelectric to ensure boosted on-current with minimized swing. |
| format |
Conference paper |
| author |
Hung-Jin Teng Yu-Hsuan Chen Nguyễn, Đăng Chiến Chun-Hsing Shih |
| spellingShingle |
Hung-Jin Teng Yu-Hsuan Chen Nguyễn, Đăng Chiến Chun-Hsing Shih Negative capacitance in short-channel tunnel field-effect transistors |
| author_facet |
Hung-Jin Teng Yu-Hsuan Chen Nguyễn, Đăng Chiến Chun-Hsing Shih |
| author_sort |
Hung-Jin Teng |
| title |
Negative capacitance in short-channel tunnel field-effect transistors |
| title_short |
Negative capacitance in short-channel tunnel field-effect transistors |
| title_full |
Negative capacitance in short-channel tunnel field-effect transistors |
| title_fullStr |
Negative capacitance in short-channel tunnel field-effect transistors |
| title_full_unstemmed |
Negative capacitance in short-channel tunnel field-effect transistors |
| title_sort |
negative capacitance in short-channel tunnel field-effect transistors |
| publisher |
IEEE Publishing |
| publishDate |
2024 |
| url |
https://scholar.dlu.edu.vn/handle/123456789/3316 |
| _version_ |
1798256990100652032 |