Tính chất vận chuyển của khí điện tử hai chiều trong giếng thế SiGe/Si/SiGe dưới ảnh hưởng của nhiệt độ và từ trường
সংরক্ষণ করুন:
প্রধান লেখক: | Nguyễn, Thị Thúy Quỳnh, Lý, Hoàng Diễm, Nguyễn, Thị Quế Trinh, Phạm, Tiến Phát |
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বিন্যাস: | প্রবন্ধ |
ভাষা: | Vietnamese |
প্রকাশিত: |
2023
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বিষয়গুলি: | |
অনলাইন ব্যবহার করুন: | https://sti.vista.gov.vn/tw/Pages/tai-lieu-khcn.aspx?ItemID=331122 https://scholar.dlu.edu.vn/thuvienso/handle/DLU123456789/146277 |
ট্যাগগুলো: |
ট্যাগ যুক্ত করুন
কোনো ট্যাগ নেই, প্রথমজন হিসাবে ট্যাগ করুন!
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Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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অনুরূপ উপাদানগুলি
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SiGe-based Re-engineering of Electronic Warfare Subsystems
অনুযায়ী: Lambrechts, Wynand, অন্যান্য
প্রকাশিত: (2020) -
Different scalabilities of N- and P-Type tunnel field-effect transistors with Si/SiGe heterojunctions
অনুযায়ী: Nguyễn, Đăng Chiến, অন্যান্য
প্রকাশিত: (2024) -
Research on the Radiation Effects and Compact Model of SiGe HBT. 1st ed. 2018
অনুযায়ী: Sun, Yabin
প্রকাশিত: (2020) -
Short-channel effects in tunnel field-effect transistors with different configurations of abrupt and graded Si/SiGe heterojunctions
অনুযায়ী: Nguyễn, Đăng Chiến, অন্যান্য
প্রকাশিত: (2023) -
Design optimization of extremely short-channel graded Si/SiGe heterojunction tunnel field-effect transistors for low power applications
অনুযায়ী: Nguyễn, Đăng Chiến, অন্যান্য
প্রকাশিত: (2024)