Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Bibliografische gegevens
Hoofdauteur:	Gil, Tae-Hyun.
Andere auteurs:	Kim, Han-Soo., Kim, Yong-Sang.
Formaat:	Artikel
Taal:	English
Onderwerpen:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Tags:	Voeg label toe Geen labels, Wees de eerste die dit record labelt!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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