Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Hlavní autor:	Gil, Tae-Hyun.
Další autoři:	Kim, Han-Soo., Kim, Yong-Sang.
Médium:	Článek
Jazyk:	English
Témata:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo otaguje tento záznam!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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