Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Библиографические подробности
Главный автор:	Gil, Tae-Hyun.
Другие авторы:	Kim, Han-Soo., Kim, Yong-Sang.
Формат:	Статья
Язык:	English
Предметы:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Метки:	Добавить метку Нет меток, Требуется 1-ая метка записи!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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