Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Chi tiết về thư mục
Tác giả chính:	Gil, Tae-Hyun.
Tác giả khác:	Kim, Han-Soo., Kim, Yong-Sang.
Định dạng:	Bài viết
Ngôn ngữ:	English
Những chủ đề:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Các nhãn:	Thêm thẻ Không có thẻ, Là người đầu tiên thẻ bản ghi này!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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