Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Detalhes bibliográficos
Autor principal:	Gil, Tae-Hyun.
Outros Autores:	Kim, Han-Soo., Kim, Yong-Sang.
Formato:	Artigo
Idioma:	English
Assuntos:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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