Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Characteristics of Ni/SiC schottky diodes grown by ICP-CVD /

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Opis bibliograficzny
1. autor:	Gil, Tae-Hyun.
Kolejni autorzy:	Kim, Han-Soo., Kim, Yong-Sang.
Format:	Artykuł
Język:	English
Hasła przedmiotowe:	Breakdown voltage Chemical vapor depositon Inductively coupled plasma Schottky barrier height Silicon carbide
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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