MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /
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| Other Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Subjects: | |
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| Institutions: | Thư viện Trường Đại học Đà Lạt |
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