MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /

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MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /

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Bibliografske podrobnosti
Drugi avtorji:	Birkner, Alexander., Devi, Anjana., Fischer, Roland A., Hambrock, Julia., Khanderi, Jayaprakash., Parala, Harish., Wohlfart, Andreas.
Format:	Bài viết
Jezik:	English
Teme:	Autocatalysis Crystal growth habit Inorganic compounds Morphology Nanocrystals Nanostructures
Oznake:	Označite Brez oznak, prvi označite!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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