MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /

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MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /

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מידע ביבליוגרפי
מחברים אחרים:	Birkner, Alexander., Devi, Anjana., Fischer, Roland A., Hambrock, Julia., Khanderi, Jayaprakash., Parala, Harish., Wohlfart, Andreas.
פורמט:	Bài viết
שפה:	English
נושאים:	Autocatalysis Crystal growth habit Inorganic compounds Morphology Nanocrystals Nanostructures
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!

Thư viện lưu trữ:	Thư viện Trường Đại học Đà Lạt

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