MOCVD of gallium nitride nanostructures using (N3)2Ga&(CH2)3NR2;, R= Me, Et, as a single molecule precursor : Morphology control and materials characterization /
Sparad:
| Övriga upphovsmän: | Birkner, Alexander., Devi, Anjana., Fischer, Roland A., Hambrock, Julia., Khanderi, Jayaprakash., Parala, Harish., Wohlfart, Andreas. |
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| Materialtyp: | Artikel |
| Språk: | English |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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