Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors

Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-chan...

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Asıl Yazarlar: Nguyễn, Đăng Chiến, Chun-Hsing Shih, Hung-Jin, Teng, Cong Kha Pham
Materyal Türü: Journal Article
Dil:English
Baskı/Yayın Bilgisi: 2023
Online Erişim:https://scholar.dlu.edu.vn/handle/123456789/2074
Etiketler: Etiketle
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Thư viện lưu trữ: Thư viện Trường Đại học Đà Lạt
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Özet:Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-channel effect is more severe with using lower bandgap materials although the supply voltage is scaled in parallel with the bandgap. For a given bandgap material, the short-channel effect can be well evaluated by the increase of drain-induced barrier thinning (DIBT) with decreasing the channel length. For different bandgap TFETs, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the TFET scalability is necessary in designing scaled integrated circuits.