Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-chan...
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| Những tác giả chính: | , , , |
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| Định dạng: | Journal Article |
| Ngôn ngữ: | English |
| Được phát hành: |
2023
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| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/2074 |
| Các nhãn: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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| Tóm tắt: | Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-channel effect is more severe with using lower bandgap materials although the supply voltage is scaled in parallel with the bandgap. For a given bandgap material, the short-channel effect can be well evaluated by the increase of drain-induced barrier thinning (DIBT) with decreasing the channel length. For different bandgap TFETs, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the TFET scalability is necessary in designing scaled integrated circuits. |
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