Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors

Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors

Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-chan...

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Những tác giả chính: Nguyễn, Đăng Chiến, Chun-Hsing Shih, Hung-Jin, Teng, Cong Kha Pham
Định dạng: Journal Article
Ngôn ngữ:English
Được phát hành: 2023
Truy cập trực tuyến:https://scholar.dlu.edu.vn/handle/123456789/2074
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spelling oai:scholar.dlu.edu.vn:123456789-20742024-03-01T04:00:25Z Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors Nguyễn, Đăng Chiến Chun-Hsing Shih Hung-Jin, Teng Cong Kha Pham Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-channel effect is more severe with using lower bandgap materials although the supply voltage is scaled in parallel with the bandgap. For a given bandgap material, the short-channel effect can be well evaluated by the increase of drain-induced barrier thinning (DIBT) with decreasing the channel length. For different bandgap TFETs, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the TFET scalability is necessary in designing scaled integrated circuits. 1034 012003 2023-04-28T09:14:48Z 2023-04-28T09:14:48Z 2018 Journal Article Bài báo đăng trên tạp chí thuộc SCOPUS, bao gồm book chapter https://scholar.dlu.edu.vn/handle/123456789/2074 10.1088/1742-6596/1034/1/012003 en Journal of Physics: Conference Series 42nd Vietnam National Conference on Theoretical Physics (NCTP-42) 1742-6588 [1] Appenzeller J, Lin Y-M, Knoch J and Avouris Ph 2004 Phys. Rev. Lett. 93 196905. [2] Choi W Y, Park B-G, Lee J D and Liu T-J K 2007 IEEE Electron Device Lett. 28 743 [3] Seabaugh A C and Zhang Q 2010 Proc. IEEE 98 2095 [4] Zhang Q, Fang T, Xing H, Seabaugh A and Jena D 2008 IEEE Electron Device Lett. 29 1344 [5] Chien N D, Shih C-H and Vinh L T 2013 J. Appl. Phys. 114 094507 [2013 Erratum 114 189901] [6] Ilatikhameneh H, Klimeck G, Appenzeller J and Rahman R 2016 IEEE J. Electron Devices Soc. 4 260 [7] Wang P-Y and Tsui B-Y 2016 IEEE Trans. Nanotechnol. 15 74 [8] Kane E O 1961 J. Appl. Phys. 31 83 [9] Bardon M G, Neves H P, Puers R and Hoof C V 2010 IEEE Trans. Electron Devices 57 827 [10] Liu L, Mohata D and Datta S 2012 IEEE Trans. Electron Devices 59 902 [11] Yoon Y J, Eun H R, Seo J H, Kang H-S, Lee S M, Lee J, Cho S, Tae H-S, Lee J-H and Kang I M 2015 J. Nanosci. Nanotechnol. 15 7430 [12] Chien N D and Shih C-H 2016 Superlattice. Microst. 100 857 [13] Ilatikhameneh H, Klimeck G and Rahman R 2016 IEEE Electron Device Lett. 37 115 [14] Wan J, Zaslavsky A, Le Royer C and Cristoloveanu S 2013 IEEE Electron Device Lett. 34 24 [15] 2010 Synopsys MEDICI User’s Manual (California: Synopsys Inc.) [16] Kim S H, Kam H, Hu C, Liu T-J K 2009 Proc. VLSI Symp. Tech. Dig. (16-18 Jun 2009, Honolulu) p 178 [17] Shih C-H and Chien N D 2013 J. Appl. Phys. 113 134507 [18] Shih C-H and Chien N D 2014 IEEE Trans. Electron Devices 61 1907 [19] Toh E-H, Wang G H, Samudra G and Yeo Y-C 2008 J. Appl. Phys. 103 104504 [20] Chien N D, Shih C-H, Chen Y-H and Thu N T 2016 Proc. Int. Conf. on Electronics, Information and Communication (27-30 Jan 2016, Da Nang) p 10
institution Thư viện Trường Đại học Đà Lạt
collection Thư viện số
language English
description Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-channel effect is more severe with using lower bandgap materials although the supply voltage is scaled in parallel with the bandgap. For a given bandgap material, the short-channel effect can be well evaluated by the increase of drain-induced barrier thinning (DIBT) with decreasing the channel length. For different bandgap TFETs, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the TFET scalability is necessary in designing scaled integrated circuits.
format Journal Article
author Nguyễn, Đăng Chiến
Chun-Hsing Shih
Hung-Jin, Teng
Cong Kha Pham
spellingShingle Nguyễn, Đăng Chiến
Chun-Hsing Shih
Hung-Jin, Teng
Cong Kha Pham
Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
author_facet Nguyễn, Đăng Chiến
Chun-Hsing Shih
Hung-Jin, Teng
Cong Kha Pham
author_sort Nguyễn, Đăng Chiến
title Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
title_short Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
title_full Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
title_fullStr Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
title_full_unstemmed Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
title_sort dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
publishDate 2023
url https://scholar.dlu.edu.vn/handle/123456789/2074
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