Dependence of short-channel effects on semiconductor bandgap in tunnel field-effect transistors
Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-chan...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
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| Μορφή: | Journal Article |
| Γλώσσα: | English |
| Έκδοση: |
2023
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| Διαθέσιμο Online: | https://scholar.dlu.edu.vn/handle/123456789/2074 |
| Ετικέτες: |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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