Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
In this study, we examined the influence of using hetero-gate dielectrics (HGDs) on the short-channel effects (SCEs) in scaled tunnel field-effect transistors (TFETs). For bulk TFETs, the short-channel performance is not influenced by the HGD engineering because the SCEs are caused by the tunneling...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
|---|---|
| Μορφή: | Journal article |
| Γλώσσα: | English |
| Έκδοση: |
Elsevier
2024
|
| Θέματα: | |
| Διαθέσιμο Online: | https://scholar.dlu.edu.vn/handle/123456789/3289 |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|