Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ideal sub-5-mV/dec switching of scaled sub-10-nm...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Journal article |
| Sprache: | English |
| Veröffentlicht: |
IEEE Publishing
2024
|
| Schlagworte: | |
| Online Zugang: | https://scholar.dlu.edu.vn/handle/123456789/3297 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|