Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ideal sub-5-mV/dec switching of scaled sub-10-nm...
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| Hlavní autoři: | , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
IEEE Publishing
2024
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| On-line přístup: | https://scholar.dlu.edu.vn/handle/123456789/3297 |
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| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
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