Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction
This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ideal sub-5-mV/dec switching of scaled sub-10-nm...
Đã lưu trong:
| Những tác giả chính: | , |
|---|---|
| 格式: | Journal article |
| 语言: | English |
| 出版: |
IEEE Publishing
2024
|
| 主题: | |
| 在线阅读: | https://scholar.dlu.edu.vn/handle/123456789/3297 |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|