Schottky barrier silicon nanowire SONOS memory with ultralow programming and erasing voltages
A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) m...
Đã lưu trong:
| Những tác giả chính: | , , , , , , , , , |
|---|---|
| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
IEEE Publishing
2024
|
| Những chủ đề: | |
| Truy cập trực tuyến: | https://scholar.dlu.edu.vn/handle/123456789/3298 |
| Các nhãn: |
Thêm thẻ
Không có thẻ, Là người đầu tiên thẻ bản ghi này!
|
| Thư viện lưu trữ: | Thư viện Trường Đại học Đà Lạt |
|---|
| Tóm tắt: | A new Schottky barrier (SB) nonvolatile nanowire memory is reported experimentally with efficient low-voltage programming and erasing. By applying an SB source/drain to enhance the electrical field in the silicon gate-all-around nanowire, the nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory can operate at gate voltages of 5 to 7 V for programming and -7 to -9 V for erasing through Fowler-Nordheim tunneling. The larger the gate voltage is, the faster the programming/erasing speed and the wider the threshold-voltage shift are attained. Importantly, the SB nanowire SONOS cells exhibit superior 100-K cycling endurance and high-temperature retention without any damages from metallic silicidation process or field-enhanced tunneling. |
|---|